ksm b47p06 kersmi electronic co.,ltd. - 60 v p - channel mosfet www.kersemi.com 1 description this p - channel mosfet s use advanced trench technology and design to provide excellent rds(on) with low gate charge. it can be used in a wide variety of applications. features 1 ) low gate charge. 2) green device available. 3) advanced high cell denity trench technology for ultra rds(on) 4) excellent package for good heat dissipation. to - 263 absolute maximum ratings t c =25 ,unless otherwise noted symbol parameter ratings units vds drain - source voltage - 60 v vgs gate - source voltage 20 v id continuous drain current - 1 - 47 a continuous drain current - t=100 mj pd power dissipation4 160 w tj, tstg operating and storage junction temperature range - 55 to +175 thermal characteristics bvdss rdson id - 60 v 0.026 - 47 a
ksm b47p06 kersmi electronic co.,ltd. - 60 v p - channel mosfet www.kersemi.com 2 package marking and ordering information part no. marking package ksmb47p0 6 KSMB47P06 to - 263 electrical characteristics t c =25 unless otherwise noted s ymbol parameter conditions min typ max units off characteristics bv dss drain - sourtce breakdown voltage v ds =0v,i d =250a v i dss zero gate voltage drain current v ds =0v, v ds =32v a i gss gate - source leakage current v ds =20v, v ds =0a 100 na on characteristics v gs(th) gate - source threshold voltage v ds =vds, i d =250a - 2.0 v r ds(on) drain - source on resistance 2 v ds =10v,i d =6a v ds =2.5v,i d =5a --- g fs forward transconductance v ds =5v,i d =12a s dynamic characteristics c iss i nput capacitance v ds =15v,v gs =0v, f=1mhz pf c oss output capacitance rss reverse transfer capacitance switching characteristics t d(on ) turn - on delay time v ds =20v, v gs =10v,r gen =3.3 ns t r rise time ns t d(off) t urn - off delay time ns t f f all time ns q g total gate charge v gs =4.5v, v ds =20v , i d =6a nc q gs gate - sourcecharge nc q gd gate - drain miller charge nc drain - source diode characteristics v sd source - drain diode forwardvoltage 2 v gs =0v,i s =1a rr reverse recovery time i f =7a,di/dt=100a/s rr reverse recovery charge symbol parameter ratings units r ? jc thermal resistance ,junction to case1 0.94 /w r ? ja thermal resistance, junction to ambient1 62.5
ksm b47p06 kersmi electronic co.,ltd. - 60 v p - channel mosfet www.kersemi.com 3 notes: 1. the data tested by surface mounted on a 1 inch 2 fr - 4 board 2oz copper. 2. the data tested by pulse width300us,duty cycle2% 3. the eas data shows max.rating.the test condition is v dd =25v,v gs =10v,l=0.1mh,i as =17.8a 4. the power dissipation is limited by 150 junction temperature. typical characteristics t j =25 u nless otherwise noted figure 1. on - region characteristics figure 2. transfer characteristics figure 3 . capacitance characteristics figure 4 . on - resistance variat ion vs . drain current and gate voltage
ksm b47p06 kersmi electronic co.,ltd. - 60 v p - channel mosfet www.kersemi.com 4 figure 5 . gate charge characteristics figure 6 . body diode forward voltage variation vs. source current and temperature figure 7. breakdown voltage variation f igure 8 .maximum safe operating area vs. temperature figure 9 . transient thermal response curve
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